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| SD103A...SD103C SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other uses are for click suppression, efficient full wave bridges in telephone subsets, and as blocking diodes in rechargeable low voltage battery system. Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand Max. 0.5 Min. 27.5 Max. 1.9 XXX ST Max. 3.9 This diode is also available in MiniMELF case with type designation LL103A, B, C. Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage SD103A SD103B SD103C Symbol VRRM Ptot IFSM Tj TS Value 40 30 20 400 15 125 - 55 to + 175 1) Unit V mW A O Power Dissipation Single Cycle Surge 60 Hz Sine Wave Junction Temperature Storage Temperature Range 1) C C O Valid provided the leads direct at the case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 20 mA at IF = 200 mA Reverse Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA to 200 mA , recover to 0.1 IR Symbol VF VF SD103A SD103B SD103C IR Typ. Max. 0.37 0.6 5 Unit V V A Ctot trr 50 10 - pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/06/2007 SD103A...SD103C Typical variation of fwd. current vs.fwd.voltage for primary conduction through the Schottky barrier mA 103 SD103 Typical high current forward conduction curve tp=300 s, duty cycle=2% A 5 SD103 IF 10 2 IF 4 10 3 1 2 10 -1 1 10 -2 0 0.5 VF 1V 0 0 0.5 1 VF 1.5V Typical non repetitive forward surge current versus pulse width Rectangular pulse A 50 SD103 Typical variation of reverse current at various temperatures A 103 SD103 Tamb=125o C 100 oC 10 2 75 oC 10 50 oC IF 40 IR 30 20 1 10 10 -1 10 -3 10 -2 10 -1 1 10 tp 10 2 103 ms 0 10 20 30 VR 40 50V 25 oC 0 Blocking voltage deration versus temperature at various average forward currents V 50 SD103 Typical capacitance versus reverse voltage pF 100 7 5 4 3 2 SD103 VR 40 100 mA 30 200 mA 20 I F=400 mA Ctot 10 7 5 4 3 2 10 0 0 100 Tamb 200 C o 1 0 10 20 30 VR 40 50V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/06/2007 |
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